Title :
WireFET Technology for 3-D Integrated Circuits
Author :
Varadarajan, Vidya ; Yasuda, Yuri ; Balasubramanian, Sriram ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA
Abstract :
A novel method to fabricate a transistor directly within a wire is presented. The phenomenon of aluminum-induced crystallization of silicon is used to embed crystalline Si regions within an aluminum wire, enabling FETs to be fabricated directly within interconnects. The wireFET fabrication process is relatively simple, does not require unconventional materials or processing methods, and has low associated thermal budget (Tmax les 400 degC), so that it can be a cost-effective method for implementing 3-dimensionally integrated circuits
Keywords :
MOSFET; crystallisation; integrated circuit interconnections; integrated circuit technology; 3D integrated circuits; aluminum-induced crystallization; cost-effective method; low associated thermal budget; wireFET fabrication process; Aluminum; Crystalline materials; Crystallization; FETs; Fabrication; Integrated circuit interconnections; Integrated circuit technology; Silicon; Three-dimensional integrated circuits; Wire;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346982
