• DocumentCode
    2391284
  • Title

    A precise model for leakage power estimation in VLSI circuits

  • Author

    Derakhshandeh, J. ; Masoumi, Nasser ; Aghnoot, S. ; Kasiri, B. ; Farazmand, Y. ; Akbarzadeh

  • Author_Institution
    VLSI Res. Group, Tehran Univ., Iran
  • fYear
    2005
  • fDate
    20-24 July 2005
  • Firstpage
    337
  • Lastpage
    340
  • Abstract
    Leakage current is becoming very important factor in determining the feasibility of designs, today. Due to exponential relationship between leakage current and threshold voltage in the weak inversion region, leakage power can no longer be ignored. In this paper we present a technique to accurately estimate leakage power by a linear model. In the first model the inputs are the number of all gates that used in circuit. And in the second model inputs are the number of gates and in the third model inputs are the number of input states of gates. The model is validated for a large benchmark circuits and the leakage power predicted by our model is within 5% of the actual leakage power predicted by a popular tool used in the industry.
  • Keywords
    VLSI; integrated circuit modelling; leakage currents; logic gates; VLSI circuits; leakage current; leakage power estimation; logic gates; threshold voltage; weak inversion region; Artificial intelligence; Circuit simulation; Computational modeling; Decision support systems; Equations; Phase estimation; Predictive models; Subthreshold current; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    System-on-Chip for Real-Time Applications, 2005. Proceedings. Fifth International Workshop on
  • Print_ISBN
    0-7695-2403-6
  • Type

    conf

  • DOI
    10.1109/IWSOC.2005.23
  • Filename
    1530967