Title :
InP HEMT IC technology for 40 Gbit/s and beyond
Author :
Murata, K. ; Sano, K. ; Fukuyama, H. ; Yamane, Y. ; Fukai, Y.K. ; Kitabayashi, H. ; Sugahara, H. ; Enoki, T.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
InP-based HEMT integrated circuit (IC) technology has contributed much to the research and development of highspeed optical communications systems and microwave/millimeter-wave wireless systems. This paper describes recent progress in our InP HEMT IC technology for 40 Gbit/s optical communications systems and discusses future prospects for 100 Gbit/s and beyond.
Keywords :
HEMT integrated circuits; III-V semiconductors; indium compounds; optical receivers; optical transmitters; 100 Gbit/s; 40 Gbit/s; HEMT IC technology; InP; high-speed optical communications systems; optical fiber communications; HEMTs; Indium phosphide; Integrated circuit technology; Microwave integrated circuits; Microwave technology; Millimeter wave integrated circuits; Millimeter wave technology; Optical fiber communication; Photonic integrated circuits; Research and development;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252385
