DocumentCode
2391350
Title
InP HEMT IC technology for 40 Gbit/s and beyond
Author
Murata, K. ; Sano, K. ; Fukuyama, H. ; Yamane, Y. ; Fukai, Y.K. ; Kitabayashi, H. ; Sugahara, H. ; Enoki, T.
Author_Institution
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
fYear
2003
fDate
9-12 Nov. 2003
Firstpage
161
Lastpage
164
Abstract
InP-based HEMT integrated circuit (IC) technology has contributed much to the research and development of highspeed optical communications systems and microwave/millimeter-wave wireless systems. This paper describes recent progress in our InP HEMT IC technology for 40 Gbit/s optical communications systems and discusses future prospects for 100 Gbit/s and beyond.
Keywords
HEMT integrated circuits; III-V semiconductors; indium compounds; optical receivers; optical transmitters; 100 Gbit/s; 40 Gbit/s; HEMT IC technology; InP; high-speed optical communications systems; optical fiber communications; HEMTs; Indium phosphide; Integrated circuit technology; Microwave integrated circuits; Microwave technology; Millimeter wave integrated circuits; Millimeter wave technology; Optical fiber communication; Photonic integrated circuits; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location
San Diego, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-7833-4
Type
conf
DOI
10.1109/GAAS.2003.1252385
Filename
1252385
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