DocumentCode :
2391387
Title :
Scaling tradeoffs for CMOS-based VLSI packaging
Author :
Yang, Yaochao ; Brews, John R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fYear :
1995
fDate :
21-24 May 1995
Firstpage :
621
Lastpage :
633
Abstract :
Scaling tradeoffs for terminations and interconnects with pre-specified overall system performance are discussed in this paper. If the overall performance requirements are to be met, it is shown that to scale the interconnect cross section with a specified scaling factor S c2 requires a scaling factor less than Sc for driver area and receiver area. Closed-form expressions for the required effective driver resistance and for the required effective load capacitance are given. For cases with fixed dimensionless driver resistance, several possible scaling scenarios for interconnects with different scaling factors are discussed. It is found that to avoid performance degradation the line spacing should be scaled by a smaller factor than that for other package dimensions. In other words, scaling with a fixed dimensionless driver resistance requires decreased line coupling. Scaling for package cross-sections (including line spacing) with fixed driver resistance also is investigated by scaling dielectric constant. It is shown that a smaller dielectric constant for the scaled package than that for unsealed structure is needed to meet the overall performance requirements. For cases with increased line length, scaling for package cross-sections becomes limited. Our studies also show strong dependence of the scaling tradeoffs on the choice of packaging structure that is to be scaled
Keywords :
CMOS integrated circuits; VLSI; capacitance; electric resistance; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; permittivity; CMOS-based packaging; VLSI packaging; dielectric constant; effective driver resistance; effective load capacitance; interconnects; line spacing; package cross-sections; scaling factor; scaling tradeoffs; terminations; Capacitance; Crosstalk; Degradation; Dielectrics; Electronics packaging; Integrated circuit interconnections; Integrated circuit noise; Semiconductor device noise; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1995. Proceedings., 45th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2736-5
Type :
conf
DOI :
10.1109/ECTC.1995.515348
Filename :
515348
Link To Document :
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