Title :
PSP-based compact FinFET model describing dc and RF measurements
Author :
Smit, Geert D. J. ; Scholten, A.J. ; Serra, N. ; Pijper, Ralf M. T. ; van Langevelde, R. ; Mercha, A. ; Gildenblat, G. ; Klaassen, D.B.M.
Author_Institution :
NXP Semicond., Eindhoven
Abstract :
We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, which is suitable for digital, analog, and RF circuit simulation. The model is surface potential based and is demonstrated to accurately describe both TCAD data and measured FinFET currents, conductances, and capacitances
Keywords :
MOSFET; circuit simulation; semiconductor device measurement; semiconductor device models; PSP-based compact FinFET model; RF circuit simulation; RF measurement; TCAD data; analog circuit simulation; dc measurement; digital circuit simulation; lightly doped body; surface potential; symmetric 3-terminal FinFET; thin undoped body; Capacitance measurement; Circuit simulation; Current measurement; Electrostatics; Europe; FinFETs; MOSFETs; Poisson equations; Quantum mechanics; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346990
