DocumentCode
2391408
Title
PSP-based compact FinFET model describing dc and RF measurements
Author
Smit, Geert D. J. ; Scholten, A.J. ; Serra, N. ; Pijper, Ralf M. T. ; van Langevelde, R. ; Mercha, A. ; Gildenblat, G. ; Klaassen, D.B.M.
Author_Institution
NXP Semicond., Eindhoven
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, which is suitable for digital, analog, and RF circuit simulation. The model is surface potential based and is demonstrated to accurately describe both TCAD data and measured FinFET currents, conductances, and capacitances
Keywords
MOSFET; circuit simulation; semiconductor device measurement; semiconductor device models; PSP-based compact FinFET model; RF circuit simulation; RF measurement; TCAD data; analog circuit simulation; dc measurement; digital circuit simulation; lightly doped body; surface potential; symmetric 3-terminal FinFET; thin undoped body; Capacitance measurement; Circuit simulation; Current measurement; Electrostatics; Europe; FinFETs; MOSFETs; Poisson equations; Quantum mechanics; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346990
Filename
4154425
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