Title :
SiGe BiCMOS technologies for power amplifier applications
Author :
Johnson, J.B. ; Joseph, A.J. ; Sheridan, D. ; Malladi, R.M.
Author_Institution :
IBM Corp., Essex Junction, VT, USA
Abstract :
Silicon-germanium (SiGe) BiCMOS technology has advanced in many areas. In this paper, we discuss and illustrate the key device design issues for SiGe BiCMOS HBTs suitable for wireless power amplifier applications. The experimental results for high-breakdown SiGe HBTs built in several generations of BiCMOS technology are presented with focus on the 0.5 /spl mu/m SiGe BiCMOS node. Implications of recent high-performance SiGe HBT scaling achievements for BiCMOS technologies targeting wireless power amplifier applications are considered.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; power amplifiers; power bipolar transistors; semiconductor device breakdown; semiconductor materials; 0.5 micron; BiCMOS technologies; HBT scaling; SiGe; high-breakdown BiCMOS HBT; wireless power amplifiers; BiCMOS integrated circuits; Cutoff frequency; Electric breakdown; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Optical amplifiers; Power amplifiers; Silicon germanium; Space technology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252389
