• DocumentCode
    2391431
  • Title

    High performance 3D MCM using silicon microtechnologies

  • Author

    Massit, Claude G. ; Nicolas, Gerard C.

  • Author_Institution
    CENG, Grenoble, France
  • fYear
    1995
  • fDate
    21-24 May 1995
  • Firstpage
    641
  • Lastpage
    644
  • Abstract
    Future applications will require a higher I/O count, more densification, greater performance and lower cost. The Multichip Modules (MCM) offer this technical potential and possible lower cost for the global system. Three dimensional (3D) packaging is another technique that provides size and performance benefits. This paper describes a 3D structure developed in LETI with microtechnologies in and on silicon substrates. This 3D-MCM made from 2D-MCM/D technology offers a lot of advantages in terms of electrical and thermal performance. A large application field in microelectronics is ready for mass memory modules or parallel processor computers and also in microsystems where different technologies have to be closely interconnected. A technology demonstrator is presented, the chosen application is a 1-Gbit mass memory module which contains 64×16 Mbit DRAMs interconnected on 8-stacked MCMs
  • Keywords
    DRAM chips; heat conduction; integrated circuit interconnections; lead bonding; multichip modules; silicon; 1 Gbit; 16 Mbit; 3D MCM; DRAMs; MCM-D technology; Si; Si substrates; mass memory module; multichip modules; thermal performance; three dimensional packaging; Costs; Electronics packaging; Etching; Integrated circuit interconnections; Integrated circuit packaging; Multichip modules; Packaging machines; Silicon; Space technology; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1995. Proceedings., 45th
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-7803-2736-5
  • Type

    conf

  • DOI
    10.1109/ECTC.1995.515350
  • Filename
    515350