Reliability characteristics of 200 GHz f/sub T//285 GHz f/sub MAX/ SiGe HBTs

Author

Freeman, G. ; Zhijian Yang ; Guarin, F. ; Jae-Sung Rieh ; Ahlgren, D. ; Hostetter, E.

Author_Institution

Semicond. Res. & Dev. Center, IBM Microelectron., Hopewell Junction, NY, USA

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

187

Lastpage

190

Abstract

The reliability characteristics of SiGe HBTs with 200 GHz f/sub T/ and 285 GHz f/sub MAX/ are shown and discussed. We review the degradation from avalanche operation, and it is found that the degradation can be predicted using an empirical model that includes integrated avalanche charge and V/sub CB/. The model predicts acceptable lifetime degradation with operation up to 1.5-2/spl times/BV/sub CEO/. We also present, for the first time, detailed device degradation from accelerated temperature and current stress. The degradation observed compares favorably against other published silicon-based bipolar devices under comparable accelerated current stress.

Keywords

Ge-Si alloys; avalanche breakdown; heterojunction bipolar transistors; life testing; millimetre wave bipolar transistors; semiconductor device models; semiconductor device reliability; semiconductor materials; thermal stresses; 200 GHz; 285 GHz; HBT reliability characteristics; SiGe; accelerated current stress; accelerated temperature stress; acceptable lifetime degradation; avalanche operation degradation; integrated avalanche charge; Acceleration; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Predictive models; Semiconductor device reliability; Silicon germanium; Stress; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252391

Filename

1252391