DocumentCode
2391530
Title
Integrated RF MEMS/CMOS devices
Author
Mansour, R.R. ; Fouladi, S. ; Bakeri-Kassem, M.
Author_Institution
Univ. of Waterloo, Waterloo, ON
fYear
2008
fDate
9-11 April 2008
Firstpage
374
Lastpage
375
Abstract
A maskless post-processing technique for CMOS chips is developed that enables the fabrication of RF MEMS parallel-plate capacitors with a high quality factor and a very compact size. Simulations and measured results are presented for several MEMS/CMOS capacitors. A 2-pole coupled line tunable bandpass filter with a center frequency of 9.5 GHz is designed, fabricated and tested. A tuning range of 17% is achieved using integrated variable MEMS/CMOS capacitors with a quality factor exceeding 20. The tunable filter occupies a chip area of 1.2 times 2.1 mm2.
Keywords
CMOS integrated circuits; Q-factor; band-pass filters; capacitors; micromechanical devices; 2-pole coupled line tunable bandpass filter; CMOS capacitors; RF MEMS parallel-plate capacitors; frequency 9.5 GHz; integrated CMOS devices; integrated RF MEMS devices; maskkss post-processing technique; Band pass filters; CMOS technology; Capacitors; Fabrication; Frequency; Micromechanical devices; Q factor; Radiofrequency microelectromechanical systems; Semiconductor device measurement; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Test, Integration and Packaging of MEMS/MOEMS, 2008. MEMS/MOEMS 2008. Symposium on
Conference_Location
Nice
Print_ISBN
978-2-35500-006-5
Type
conf
DOI
10.1109/DTIP.2008.4753022
Filename
4753022
Link To Document