DocumentCode
2391593
Title
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit
Author
van Rijs, F. ; Theeuwen, S.J.C.H.
Author_Institution
NXP Semicond., Nijmegen
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
The paper presents the evolution in LDMOST technology of the last decade, leading to a present 32 percent efficiency value for a two carrier W-CDMA signal with -37dBc IM3 and discusses future prospects to increase the performance even further. The achieved reduction of parasitic elements currently opens the way for system concepts such as high efficiency classes and Doherty type concepts
Keywords
MOSFET; code division multiple access; Doherty type concepts; LDMOS transistors; W-CDMA signal; Base stations; Broadband amplifiers; Continuous improvement; Lead compounds; Linearity; Multiaccess communication; Performance gain; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0439-8
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346998
Filename
4154433
Link To Document