DocumentCode
2391606
Title
Organic non-volatile memory devices based on a ferroelectric polymer
Author
Kalbitz, R. ; Frübing, P. ; Gerhard, R. ; Taylor, D.M.
Author_Institution
Dept. of Phys. & Astron., Univ. of Potsdam, Potsdam, Germany
fYear
2011
fDate
28-31 Aug. 2011
Firstpage
207
Lastpage
208
Abstract
Organic based FeFETs have been studied using current-voltage measurements. Evidence is presented supporting the idea that, during the application of a sequence of poling cycles, electrons become permanently fixed at the insulator/semiconductor interface probably trapped on the positively charged surfaces of ferroelectrically polarized poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) crystalites at the interface.
Keywords
ferroelectric materials; field effect transistors; random-access storage; semiconductor device measurement; current-voltage measurements; electrons; ferroelectric polymer; ferroelectrically polarized poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) crystalites; insulator/semiconductor interface; organic based FeFET; organic non-volatile memory devices; poling cycles sequence; positively charged surfaces; Extraterrestrial measurements; FETs; Insulators; Nitrogen; Polymers; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets (ISE), 2011 14th International Symposium on
Conference_Location
Montpellier
ISSN
2153-3253
Print_ISBN
978-1-4577-1023-0
Type
conf
DOI
10.1109/ISE.2011.6085055
Filename
6085055
Link To Document