Ferroelectric polarization in poly(vinylidene fluoride-chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal

Here, we demonstrate a ferroelectric memory device using a substitute ferroelectric polymer, poly(vinylidene-co chlorotrifluoroethylene) (PVDF-CTFE) as an insulator which shows reliable ferroelectric dipole polarity upon different heat annealing condition. As a charge transport layer, one of representative organic semiconductor oligothiophene is used and to enhance the charge carrier mobility, single crystal of oligothiophene is fabricated by drop casting method with controlling the evaporation rate.