Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology

Author

Hilsenbeck, J. ; Lenk, F. ; Heinrich, W. ; Wurfl, J.

Author_Institution

Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

223

Lastpage

226

Abstract

We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far.

Keywords

III-V semiconductors; bipolar MIMIC; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 170 GHz; 34.0 to 34.4 GHz; 38 GHz; GaInP-GaAs; HBT active devices; Ka-band VCO; MMIC VCO; extrinsic base-collector capacitance; low phase noise VCO; maximum oscillation frequency; monolithic coplanar voltage-controlled oscillators; parasitic base resistance; Bit error rate; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Metallization; Noise level; Phase noise; Radar; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252399

Filename

1252399