DocumentCode :
2391700
Title :
Process Technology - Advanced Gatestack and Dielectrics
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
1
Keywords :
Costs; Hafnium; High-K gate dielectrics; MIM capacitors; Nonvolatile memory; Random access memory; SONOS devices; Silicon compounds; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Type :
conf
DOI :
10.1109/IEDM.2006.347004
Filename :
4154439
Link To Document :
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