Title :
Photoreceivers for high-bit-rate communication systems
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
This paper describes recent progress in high-speed InP-based photodiode technology for optical communications systems at bit rates from 10 Gbit/s to over 100 Gbit/s. Photoreceiver configurations, device design issues, photodiode performance, assembly technologies, and transmission characteristics are discussed.
Keywords :
III-V semiconductors; indium compounds; optical receivers; photodiodes; semiconductor device packaging; 10 to 100 Gbit/s; InP; high-bit-rate communication systems; photodiode assembly technologies; photodiode technology; photodiode transmission characteristics; photoreceivers; Bandwidth; Bit rate; Costs; Optical amplifiers; Optical fiber amplifiers; Optical fiber communication; Optical noise; Photodiodes; Propagation losses; Semiconductor optical amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252401
