Practical Work Function Tuning Based on Physical and Chemical Nature of Interfacial Impurity in Ni-FUSI/SiON and HfSiON Systems

Author

Tsuchiya, Yoshinori ; Yoshiki, Masahiko ; Sato, Motoyuki ; Sekine, Katsuyuki ; Saito, Tomohiro ; Nakajima, Kazuaki ; Aoyama, Tomonori ; Koga, Junji ; Nishiyama, Akira ; Koyama, Masato

Author_Institution

Corporate R & D Center, Toshiba Corp.

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

The paper demonstrates large effective work function (Phi_eff) modulation towards Si band-edges based on physical and chemical nature of interfacial impurities at Ni-FUSI/SiON and HfSiON interfaces. The authors clarify the influence of Ni-silicide phase on the Phi_eff modulation with dopant segregation. Phi_eff of 4.14 eV is obtained with a combination of phosphorous ion implantation last (IIL) doping and newly developed low temperature NiSi₂ formation process. The paper also proposed the realistic Phi_eff modulation with Al-segregation at Ni-FUSI/HfSiON using IIL-doping process

Keywords

hafnium compounds; ion implantation; nickel compounds; semiconductor doping; silicon compounds; work function; HfSiON; Ni-SiON; chemical nature; dopant segregation; interfacial impurity; ion implantation; physical nature; work function modulation; work function tuning; Chemical engineering; Chemical processes; Chemical technology; Dielectrics; Doping; Ion implantation; Phase modulation; Semiconductor impurities; Silicides; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.347005

Filename

4154440