Title :
Practical Work Function Tuning Based on Physical and Chemical Nature of Interfacial Impurity in Ni-FUSI/SiON and HfSiON Systems
Author :
Tsuchiya, Yoshinori ; Yoshiki, Masahiko ; Sato, Motoyuki ; Sekine, Katsuyuki ; Saito, Tomohiro ; Nakajima, Kazuaki ; Aoyama, Tomonori ; Koga, Junji ; Nishiyama, Akira ; Koyama, Masato
Author_Institution :
Corporate R & D Center, Toshiba Corp.
Abstract :
The paper demonstrates large effective work function (Phieff) modulation towards Si band-edges based on physical and chemical nature of interfacial impurities at Ni-FUSI/SiON and HfSiON interfaces. The authors clarify the influence of Ni-silicide phase on the Phieff modulation with dopant segregation. Phieff of 4.14 eV is obtained with a combination of phosphorous ion implantation last (IIL) doping and newly developed low temperature NiSi2 formation process. The paper also proposed the realistic Phieff modulation with Al-segregation at Ni-FUSI/HfSiON using IIL-doping process
Keywords :
hafnium compounds; ion implantation; nickel compounds; semiconductor doping; silicon compounds; work function; HfSiON; Ni-SiON; chemical nature; dopant segregation; interfacial impurity; ion implantation; physical nature; work function modulation; work function tuning; Chemical engineering; Chemical processes; Chemical technology; Dielectrics; Doping; Ion implantation; Phase modulation; Semiconductor impurities; Silicides; Temperature;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.347005
