Title :
An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth
Author :
Weiner, J.S. ; Lee, J.S. ; Leven, A. ; Baeyens, Y. ; Houtsma, V. ; Georgiou, G. ; Yang, Y. ; Frackoviak, J. ; Tate, A. ; Reyes, R. ; Kopf, R.F. ; Sung, W.J. ; Weimann, N.G. ; Chen, Y.K.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
In this paper, we describe an InGaAs/InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-ohms.
Keywords :
III-V semiconductors; MMIC amplifiers; S-parameters; bipolar MIMIC; bipolar MMIC; differential amplifiers; gallium arsenide; indium compounds; integrated optoelectronics; millimetre wave amplifiers; optical receivers; 47 GHz; HBT differential transimpedance amplifier; InGaAs-InP; MMIC; OEIC; S-parameters; emitter followers; high bandwidth; high gain; optical receiver; output buffer; transadmittance-transimpedance stage; Bandwidth; Circuits; Differential amplifiers; Feedback; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Resistors; Scattering parameters;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252404
