In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap NVMs

Author

Buckley, J. ; Bocquet, M. ; Molas, G. ; Gely, M. ; Brianceau, P. ; Rochat, N. ; Martinez, E. ; Martin, F. ; Grampeix, H. ; Colonna, JP ; Toffoli, A. ; Vidal, V. ; Leroux, C. ; Ghibaudo, G. ; Pananakakis, G. ; Bongiorno, C. ; Corso, D. ; Lombardo, S. ; DeS

Author_Institution

CEA-LETI, Grenoble

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

In this paper, different Hf-based oxides (HfO₂, HfSiO under several annealing conditions, HfSiON, HfAlO with various compositions) are simultaneously considered as storage layers of charge-trap memories. Based on material characterization analyses, electrical data of memory cells, physical modeling of charge-trap devices, we show that a strict relationship exists between the crystal structure of the storage layer and the memory performances. The obtained results clearly demonstrate the high interest of HfO₂ dielectric as possible storage layer of future NROM-like memory devices

Keywords

aluminium compounds; hafnium compounds; high-k dielectric thin films; random-access storage; silicon compounds; HfAlO; HfO₂; HfSiO; HfSiON; charge-trap NVM; charge-trap memories; crystal structure; high-k dielectrics; material characterization; memory performances; physical modeling; storage layer; Annealing; Crystalline materials; Data analysis; Dielectric materials; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Material storage; Nonvolatile memory; Performance analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.347010

Filename

4154445