Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM

Author

Böscke, T.S. ; Govindarajan, S. ; Fachmann, C. ; Heitmann, J. ; Avellán, A. ; Schröder, U. ; Kudelka, S. ; Kirsch, P.D. ; Krug, C. ; Hung, P.Y. ; Song, S.C. ; Ju, B.S. ; Price, J. ; Pant, G. ; Gnade, B.E ; Krautschneider, W. ; Lee, B.H. ; Jammy, R.

Author_Institution

Qimonda Dresden GmbH & Co. OHG

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

We show for the first time that control of the crystalline phases of HfO₂ by tetravalent (Si) and trivalent (Y,Gd) dopants enables significant improvements in the capacitance equivalent thickness (CET) and leakage current in capacitors targeting deep trench (DT) DRAM applications. By applying these findings, we present a MIM capacitor meeting the requirements of the 40 nm node. A CET < 1.3 nm was achieved at the deep trench DRAM thermal budget of 1000 degC

Keywords

DRAM chips; MIS capacitors; crystallisation; dielectric materials; doping profiles; gadolinium; hafnium compounds; leakage currents; nanoelectronics; silicon; yttrium; 1000 C; 40 nm; 50 nm; HfO₂; MIM capacitor; MIS capacitors; capacitance equivalent thickness; crystalline phases; deep trench DRAM; leakage current; tetragonal phase stabilization; tetravalent dopants; trivalent dopants; Capacitance; Crystallization; Dielectric constant; Doping; Grain boundaries; Hafnium oxide; Leakage current; MIM capacitors; Random access memory; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.347011

Filename

4154446