Title :
96 GHz static frequency divider in SiGe bipolar technology
Author :
Rylyakov, A. ; Zwick, T.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We report a static frequency divider designed in a 210 GHz f/sub T/, 0.13 /spl mu/m SiGe bipolar technology. The circuit consumes about 44 mA per latch (140 mA total for the chip, with input-output stages) from a -5.5 V power supply and operates up to 96.6 GHz.
Keywords :
Ge-Si alloys; bipolar MIMIC; bipolar logic circuits; flip-flops; frequency dividers; high-speed integrated circuits; millimetre wave frequency convertors; 96 GHz; SiGe; bipolar technology; differential clocking; emitter followers; fully differential circuit; high-speed technology; negative feedback; static frequency divider; static latches; toggle flip-flop; Breakdown voltage; Circuit testing; Clocks; Diodes; Frequency conversion; Germanium silicon alloys; Latches; Power supplies; Signal generators; Silicon germanium;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252413
