Title :
DARPA´s program on Antimonide Based Compound Semiconductors (ABCS)
Author :
Rosker, M. ; Shah, J.
Author_Institution :
Microsystems Technol. Office, Defense Adv. Res. Projects Agency, Arlington, VA, USA
Abstract :
Summary form only given. The objective of DARPA´s ABCS (Antimonide Based Compound Semiconductors) Program is to demonstrate low power dissipation, high frequency integrated circuits (up to 5000 components per chip) exploiting the high mobility and small bandgaps of 6.1 Å semiconductors. This talk will present an overview of the program and then discuss some exciting new results.
Keywords :
HEMT integrated circuits; bipolar integrated circuits; integrated circuit design; integrated circuit noise; low-power electronics; DARPA Program; HBT devices; HEMT devices; antimonide based compound semiconductors; circuit design; high frequency integrated circuits; high mobility; high speed integrated circuits; low noise figure; low power dissipation; low-defect substrate technology; small bandgaps; Integrated circuit technology; Photonic band gap; Power dissipation; Power engineering and energy; Power integrated circuits; Space technology; Substrates; Systems engineering and theory;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252414
