Title :
Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics
Author :
Tsai, R. ; Barsky, M. ; Boos, J.B. ; Bennett, B.R. ; Lee, J. ; Papanicolaou, N.A. ; Magno, R. ; Namba, C. ; Liu, P.H. ; Park, D. ; Grundbacher, R. ; Gutierrez, A.
Author_Institution :
Northrop Grumman Space Technol. Inc., Redondo Beach, CA, USA
Abstract :
Metamorphic high electron mobility transistors (HEMT) on GaAs substrates, with InAs channels and 0.1-/spl mu/m metal gates, have demonstrated 5 to 10 times lower power dissipation for equivalent f/sub T/ over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs. Our AlSb/InAs HEMT´s exhibit transconductances higher than 1S/mm at drain biases as low as 0.2 V, while maintaining measured f/sub T/ results greater than 200 GHz and f/sub MAX/ results approaching 200 GHz. We have achieved low power X-band MMIC low-noise amplifiers with greater than 7 dB/stage peak gain from 12-14 GHz and 6 mW/stage DC power dissipation.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MMIC; high-speed integrated circuits; indium compounds; low-power electronics; power HEMT; 12 to 14 GHz; AlSb-InAs; X-band MMIC; gate leakage; high-speed electronics; low-noise amplifiers; low-power electronics; manufacturable technology; metamorphic high electron mobility transistors; molecular beam epitaxy; transconductance; Gallium arsenide; HEMTs; High-speed electronics; Indium compounds; Indium gallium arsenide; Low-noise amplifiers; MMICs; MODFETs; Power dissipation; mHEMTs;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252415
