Title :
Transient analysis of Si-MOS and SiC-JFET cascode power switches
Author :
Boianceanu, C. ; Brezeanu, Mihai ; Palfi, A. ; Mihaila, A. ; Brezeanu, G. ; Udrea, F. ; Amaratunga, G. ; Enache, I.
Author_Institution :
Politehnic Inst. of Bucharest, Romania
fDate :
28 Sept.-2 Oct. 2003
Abstract :
The paper is concerned with the switching behaviour of the two hybrid Si/SiC high voltage cascode configurations, using OR-CAD simulations. The drive pulse parameters effects are extensively investigated. The cascode circuit with two SiC J-FETs features an easy control via the silicon MOS transistor and the ability of fast turn-on and turn off which are essential in high voltage/high speed applications.
Keywords :
MOSFET; elemental semiconductors; junction gate field effect transistors; power semiconductor switches; silicon; silicon compounds; wide band gap semiconductors; Si MOS transistor; SiC-JFET cascode power switches; drive pulse parameters; easy control; fast turn-off; fast turn-on; high voltage/high speed applications; switching behaviour; transient analysis; Circuit simulation; HVDC transmission; MOSFETs; Silicon carbide; Switched-mode power supply; Switches; Switching circuits; Traction power supplies; Transient analysis; Voltage;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1252423
