MOSFET simulation - TCAD tools/packages

Author

Campian, I. ; Profirescu, O.-G. ; Ungureanu, Alina ; Babarada, Florin ; Lakatos, Eugen ; Amza, Claudiu

Author_Institution

Politehnic Inst. of Bucharest, Romania

Volume

2

fYear

2003

fDate

28 Sept.-2 Oct. 2003

Abstract

Industry-standard TCAD software packages are widely used by semiconductor companies to optimise processes and devices in integrated circuits fabrication. After process and device simulation one can go ahead with circuit simulation using Spice. This paper focuses on the matching of these program packages in the area of parameter and characteristics extraction. We compared the transfer characteristics of n-type MOSFET, biased in the linear region, obtained from Synopsys package including TSUPREM4 and MEDICI with transfer characteristics from PSpice package.

Keywords

MOSFET; SPICE; semiconductor device models; technology CAD (electronics); MEDICI; MOSFET simulation; Spice; Synopsys package; TSUPREM4; characteristics extraction; circuit simulation; industry-standard TCAD software packages; integrated circuits fabrication; n-type MOSFET; parameter extraction; transfer characteristics; Circuit simulation; Computational modeling; Doping; Integrated circuit technology; MOSFET circuits; Medical simulation; Oxidation; Predictive models; Semiconductor device packaging; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2003. CAS 2003. International

Print_ISBN

0-7803-7821-0

Type

conf

DOI

10.1109/SMICND.2003.1252425

Filename

1252425