• DocumentCode
    2392286
  • Title

    2.4GHz power amplifier with adaptive bias circuit

  • Author

    Wenyuan Li ; Yulong Tan

  • Author_Institution
    Inst. of RF, OE-ICs Southeast Univ., Nanjing, China
  • fYear
    2012
  • fDate
    19-20 May 2012
  • Firstpage
    1402
  • Lastpage
    1406
  • Abstract
    A 2.4GHz power amplifier is designed using the HHNEC BiCMOS 0.18μm technology. The pseudo-differential structure and adaptive bias control technique are used to improve the performance. The load-pull technique is used for finding the adequate impedance values which provides the maximum output power. The simulation results show that under a supply voltage of 3.3V, P1dB is better than 23dBm and PAE is better than 17%.
  • Keywords
    BiCMOS integrated circuits; power amplifiers; HHNEC BiCMOS 0.18μm technology; adaptive bias circuit; adaptive bias control technique; adequate impedance value; frequency 2.4 GHz; load-pull technique; power amplifier; pseudo-differential structure; size 0.18 mum; BiCMOS integrated circuits; Impedance; Impedance matching; Power amplifiers; Power generation; Radio frequency; Silicon germanium; Adaptive Bias Circuit; Load-Pull; Power Amplifier; SiGe BiCMOS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Systems and Informatics (ICSAI), 2012 International Conference on
  • Conference_Location
    Yantai
  • Print_ISBN
    978-1-4673-0198-5
  • Type

    conf

  • DOI
    10.1109/ICSAI.2012.6223298
  • Filename
    6223298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2392286