Contributions to the development of MOSFET SiC technologies

Author

Avram, M. ; Codreanu, C. ; Brezeanu, G. ; Voitincu, C. ; Iliescu, C.

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania

Volume

2

fYear

2003

fDate

28 Sept.-2 Oct. 2003

Abstract

This paper outlines the recent power devices developments in the maturation of a SiC power MOSFET technology, focusing attention on device structure and performance trade-offs. Improvements will be made on the gate width, gate oxide thickness, doping concentration of the polysilicon gate and overlap spacing of existing silicon carbide MOSFET designs. The success of this design will impact power applications in the areas related to high temperature and high voltage. In the on state, the specific on-resistance is 130 mΩ/cm². The specific on-resistance of 6H-SiC MOSFET is lower than any others due to the field effect mobility of 35 cm²/Vs.

Keywords

power MOSFET; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; MOSFET SiC technologies; SiC; device structure; doping concentration; field effect mobility; gate oxide thickness; gate width; on state; overlap spacing; performance trade-offs; polysilicon gate; power devices; Breakdown voltage; Doping; Electric resistance; Electron mobility; MOSFET circuits; Paper technology; Power MOSFET; Silicon carbide; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2003. CAS 2003. International

Print_ISBN

0-7803-7821-0

Type

conf

DOI

10.1109/SMICND.2003.1252433

Filename

1252433