DocumentCode :
2392449
Title :
RF passive components in MCM-D
Author :
Zoccal, Leonardo B. ; Yamamoto, Silas D. ; Cabreira, Clovis M. ; Flacker, R. Alexander ; Gomes, Eliana A. ; Diniz, José A. ; Swart, Jacobus W.
Author_Institution :
State Univ. of Campinas, Sao Paulo
fYear :
2007
fDate :
Oct. 29 2007-Nov. 1 2007
Firstpage :
122
Lastpage :
126
Abstract :
Thin film multilayer multi chip module technology (MCM-D) may be used to realize high quality RF (radio-frequency) passive components (capacitors and inductors) and circuits patterns (transmission lines). MCM-D structure is built with metallic and dielectric layers deposited on alumina substrate by employing adapted techniques used for semiconductor integrated circuit (IC) manufacturing. These RF passive components and circuits in MCM-D were manufactured and simulated electromagnetically according to their geometry and material electrical characteristics using method of moments (MoM). Focused Ion Beam (FIB) was used for MCM-D structure analysis and layer thickness measurements. Up to 10 GHz on-wafer measurements were carried out on manufactured structures and shown good agreement with simulation results indicating they are applicable on RF devices and modules for many wireless applications.
Keywords :
capacitors; focused ion beam technology; inductors; method of moments; monolithic integrated circuits; multichip modules; radiofrequency integrated circuits; thin film devices; Al2O3; alumina substrate; capacitors; dielectric layers; focused ion beam; inductors; metallic layers; method of moments; multichip module; radiofrequency passive components; semiconductor integrated circuit manufacturing; thin film multilayer; Dielectric substrates; Dielectric thin films; Integrated circuit technology; Nonhomogeneous media; Radio frequency; Semiconductor device manufacture; Semiconductor thin films; Thin film circuits; Thin film inductors; Virtual manufacturing; MCM-D; Passive components; Thin Film Multi Layer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Optoelectronics Conference, 2007. IMOC 2007. SBMO/IEEE MTT-S International
Conference_Location :
Brazil
Print_ISBN :
978-1-4244-0661-6
Electronic_ISBN :
978-1-4244-0661-6
Type :
conf
DOI :
10.1109/IMOC.2007.4404227
Filename :
4404227
Link To Document :
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