Lumped Element MIM capacitor model for Si-RFICs

This work describes a lumped element based MIM capacitor model for the frequency range up to 110 GHz. Several MIM capacitors with different areas have been fabricated in a five metal layer 0.25 m SiGe HBT technology. All structures have been analyzed in a 2.5 D EM simulation environment and the simulated results are compared to measurements. A lumped element model valid up to 110 GHz has been developed based on curve fitting techniques. Good agreements with measurements have been achieved up to 110 GHz. Finally, the extracted model parameters suitable for the entire frequency range are tabulated.