Input noise modeling of deep submicron MOSFETs

Author

Choudhary, S. ; Qureshi, S.

Author_Institution

Indian Inst. of Technol., Kanpur

fYear

2007

fDate

Oct. 29 2007-Nov. 1 2007

Firstpage

175

Lastpage

179

Abstract

This paper presents a noise model using the channel length modulation (CLM) effect to calculate the total equivalent noise current, referred to the gate (input) of the MOSFET. It is shown here that for short channel MOSFETs the total input noise depends on the electron warming in the channel, the voltage fluctuations due to the gate polysilicon resistance, and the induced thermal noise at the gate. Taking velocity saturation effect and carrier heating effect in the gradual channel region, complete thermal noise modeling of short-channel MOSFETs including the induced gate noise and its correlation coefficients is presented.

Keywords

MOSFET; modulation; semiconductor device noise; thermal noise; carrier heating effect; channel length modulation; deep submicron MOSFET; electron warming; gate polysilicon resistance; induced thermal noise; input noise modeling; velocity saturation effect; voltage fluctuations; CMOS technology; Cutoff frequency; Electrons; Hot carriers; MOSFETs; Microwave Theory and Techniques Society; Microwave technology; Channel length modulation; short channel effects; thermal noise; velocity saturation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 2007. IMOC 2007. SBMO/IEEE MTT-S International

Conference_Location

Brazil

Print_ISBN

978-1-4244-0661-6

Electronic_ISBN

978-1-4244-0661-6

Type

conf

DOI

10.1109/IMOC.2007.4404239

Filename

4404239