DocumentCode
2392669
Title
A simple and efficient "tool" for BiCMOS high performance RF process transistors evaluation
Author
Mazilu, M.C. ; Spiridon, S. ; Eynde, F. Op t ; Dan, C. ; Bodea, M.
Author_Institution
Politehnic Inst. of Bucharest, Romania
Volume
2
fYear
2003
fDate
28 Sept.-2 Oct. 2003
Abstract
This paper presents a simple and efficient tool for fast evaluation of high performance BiCMOS RF process transistors. From the manual circuit analysis and design point of view the huge amount of information regarding transistors used in RF IC design tends to obscure the basic design parameters and theirs dependence on bias and lay-out details. Therefore it is worth and rewarding to build up a dedicated "tool" that helps the designer to evaluate "on the spot" some key electrical data sheets parameters. The "tool" consists of an evaluation circuit that allows setting the desired values for the transistors under test both static and dynamic operation parameters. This "tool" assists the designer in choosing the appropriate transistor for a given application.
Keywords
BiCMOS integrated circuits; integrated circuit design; integrated circuit measurement; integrated circuit testing; BiCMOS high performance RF process transistors evaluation; RF IC design; bias; design parameters; dynamic operation parameters; electrical data sheets parameters; evaluation circuit; lay-out details; manual circuit analysis; Analytical models; BiCMOS integrated circuits; Circuit analysis; Circuit simulation; Circuit testing; Feedback loop; Operational amplifiers; Radio frequency; Radiofrequency integrated circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN
0-7803-7821-0
Type
conf
DOI
10.1109/SMICND.2003.1252454
Filename
1252454
Link To Document