• DocumentCode
    2393380
  • Title

    Hf-based high-K dielectrics

  • Author

    Lee, Jack C.

  • Author_Institution
    Texas Univ., Austin, TX, USA
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    4
  • Lastpage
    9
  • Abstract
    We report recent results on the effects of high-temperature forming gas and deuterium anneals on performance and reliability characteristics and the effects of AC and DC stress on bias-temperature instability and time-dependent dielectrics breakdown.
  • Keywords
    MOSFET; annealing; dielectric materials; electric breakdown; hafnium compounds; semiconductor device reliability; AC stress; DC stress; HfO/sub 2/; deuterium annealing; dielectrics; high-temperature forming gas; reliability properties; time-dependent dielectrics breakdown; Annealing; Atherosclerosis; Charge pumps; Deuterium; Hafnium oxide; High-K gate dielectrics; MOSFET circuits; Monitoring; Stress; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159171
  • Filename
    1252496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393380