• DocumentCode
    2393409
  • Title

    Degradation of dielectric characteristics of underlying ultrathin SiO2 films by Al adsorption in high vacuum

  • Author

    Tanabe, M. ; Goto, M. ; Uedono, A. ; Yamabe, K.

  • Author_Institution
    Inst. of Appl. Phys., Tsukuba Univ., Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    18
  • Lastpage
    19
  • Abstract
    Electrical characteristics of underlying thin SiO/sub 2/ films after the Al adsorption and the following removal of it are investigated using MOS capacitors. Al adsorption caused the SiO/sub 2/ thinning and increases of leakage current.
  • Keywords
    MOS capacitors; adsorption; dielectric materials; dielectric thin films; leakage currents; silicon compounds; Al; Al adsorption; MOS capacitors; SiO/sub 2/; dielectric properties degradation; electrical properties; leakage current; ultrathin SiO/sub 2/ films; Artificial intelligence; Crystallization; Degradation; Dielectric substrates; Dielectric thin films; Electric variables; Leakage current; MOS capacitors; Semiconductor films; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159173
  • Filename
    1252498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393409