• DocumentCode
    2393442
  • Title

    The influence of silicon nitride cap on NBTI and fermi pinning in HfO2 gate stacks

  • Author

    Sasaki, Takaoki ; Ootsuka, Fumio ; Hoshi, Takeshi ; Kawahara, Takaaki ; Maeda, Takeshi ; Yasuhira, Mitsuo ; Arikado, Tsunetoshi

  • Author_Institution
    Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    20
  • Lastpage
    23
  • Abstract
    In this paper, we report the improvements in the interfacial reaction between the gate dielectric and the gate electrode by adding SiN cap layer on HfO/sub 2/. We also report the drastic improvements in the gate leakage, V/sub th/ shift and NBTI.
  • Keywords
    MOSFET; hafnium compounds; interface states; semiconductor device reliability; silicon compounds; thin films; Fermi pinning; HfO/sub 2/ gate; NBTI; SiN-HfO/sub 2/; gate electrode; gate leakage; interfacial reaction; negative bias; negative bias temperature instability; silicon nitride cap; temperature instability; Electrodes; Gate leakage; Hafnium oxide; High-K gate dielectrics; Hydrogen; Niobium compounds; Nitrogen; Silicon compounds; Stress; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159174
  • Filename
    1252499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393442