• DocumentCode
    2393494
  • Title

    Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors

  • Author

    Xuan, Y. ; Yasuda, T.

  • Author_Institution
    Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    24
  • Lastpage
    27
  • Abstract
    Hafnium silicate films were successfully prepared by VALID using TEOS as the Si source. They show well behaved C-V characteristics, and their leakage current density was analysed.
  • Keywords
    MOS capacitors; atomic layer deposition; current density; dielectric thin films; ferroelectric materials; hafnium compounds; leakage currents; C-V characteristics; HfSiO; hafnium silicate films; leakage current density; vapor liquid hybrid deposition; Annealing; Atomic layer deposition; Chemical vapor deposition; Dielectric substrates; Hafnium; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Temperature; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159175
  • Filename
    1252500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393494