• DocumentCode
    2393525
  • Title

    Effects of Hf sources, oxidizing agents, and NH3 radicals on properties of HfAlOx films prepared by atomic layer deposition

  • Author

    Kawahara, Takaaki ; Torii, Kentaro ; Mitsuhashi, Riichirou ; Mutoh, Akiyoshi ; Horiuchi, Atsushi ; Ito, Hiroyuki ; Kitajima, Hiroshi

  • Author_Institution
    Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    32
  • Lastpage
    37
  • Abstract
    In this paper, we investigated the influence of the combination of precursors on the deposition rate, the uniformity, the amount of residual impurities, together with electrical properties.
  • Keywords
    atomic layer deposition; dielectric thin films; electron mobility; field effect transistors; hafnium compounds; impurities; oxidation; Hf sources; HfAlO/sub x/; HfAlO/sub x/ films; NH/sub 3/ radicals; atomic layer deposition; electrical properties; oxidizing agents; residual impurities; Argon; Atomic layer deposition; Dielectric measurements; Hafnium; High K dielectric materials; High-K gate dielectrics; Impurities; Inductors; Plasma temperature; Semiconductor films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159177
  • Filename
    1252502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393525