Title :
Solution-based fabrication of high-k gate dielectrics
Author :
Aoki, Yoshitaka ; Kunitake, Toyoki
Author_Institution :
Topochem. Design Lab., RIKEN, Wako, Japan
Abstract :
In this paper, we conducted fabrication of ultrathin films from conventional dielectric materials MO/sub x/ (M=Ti, Zr) as well as from binary oxide composites MO/sub x/-MO/sub y/ (M=Ta, La).
Keywords :
composite materials; dielectric materials; dielectric thin films; lanthanum compounds; sol-gel processing; tantalum compounds; titanium compounds; zirconium compounds; TiO/sub 2/-La/sub 2/O/sub 3/; ZrO/sub 2/-LaO; binary oxide composites; dielectric materials; high-k gate dielectrics; solution-based fabrication; ultrathin films; Annealing; Dielectric thin films; Fabrication; High K dielectric materials; High-K gate dielectrics; Metal-insulator structures; Semiconductor films; Sputtering; Thickness control; Zirconium;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159179
