• DocumentCode
    2393559
  • Title

    Solution-based fabrication of high-k gate dielectrics

  • Author

    Aoki, Yoshitaka ; Kunitake, Toyoki

  • Author_Institution
    Topochem. Design Lab., RIKEN, Wako, Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    40
  • Lastpage
    41
  • Abstract
    In this paper, we conducted fabrication of ultrathin films from conventional dielectric materials MO/sub x/ (M=Ti, Zr) as well as from binary oxide composites MO/sub x/-MO/sub y/ (M=Ta, La).
  • Keywords
    composite materials; dielectric materials; dielectric thin films; lanthanum compounds; sol-gel processing; tantalum compounds; titanium compounds; zirconium compounds; TiO/sub 2/-La/sub 2/O/sub 3/; ZrO/sub 2/-LaO; binary oxide composites; dielectric materials; high-k gate dielectrics; solution-based fabrication; ultrathin films; Annealing; Dielectric thin films; Fabrication; High K dielectric materials; High-K gate dielectrics; Metal-insulator structures; Semiconductor films; Sputtering; Thickness control; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159179
  • Filename
    1252504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393559