DocumentCode
2393638
Title
Ultra-thin SiN gate dielectric fabricated by N2 plasma direct nitridation
Author
Inoue, M. ; Tsuchimoto, J. ; Mizutani, M. ; Yugami, J. ; Ohno, Y. ; Yoneda, M.
Author_Institution
Process Dev. Dept., Renesas Technol. Corp., Hyogo, Japan
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
58
Lastpage
60
Abstract
In this study, we used direct nitridation technique using N/sub 2/ plasma to from ultra-thin SiN gate dielectric and successfully fabricated poly-Si gate CMOS device with mass production compatible fabrication flow including source and drain silicidation and 1050/spl deg/C spike anneal. We also studied these SiN gate dielectrics from reliability including dielectric breakdown.
Keywords
MIS capacitors; annealing; dielectric materials; dielectric thin films; electric breakdown; elemental semiconductors; nitridation; permittivity; plasma materials processing; silicon; silicon compounds; superconducting device reliability; 1050 degC; CMOS device; N/sub 2/ plasma direct nitridation; Si-SiN; annealing; dielectric breakdown; permittivity; reliability; ultra-thin SiN gate dielectric; Capacitance-voltage characteristics; Capacitors; Dielectric substrates; Plasma measurements; Plasma properties; Plasma temperature; Semiconductor films; Silicon compounds; Stress control; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159184
Filename
1252509
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