• DocumentCode
    2393669
  • Title

    Effects of interactions between HfO2 and poly-Si on MOSCAP and MOSFET electrical behavior

  • Author

    Kaushik, V.S. ; Rohr, E. ; Gendt, S. De ; Delabie, A. ; Elshocht, S. Van ; Claes, M. ; Shi, X. ; Shimamoto, Y. ; Ragnarsson, LA ; Witters, T. ; Manabe, Y. ; Heyns, M.

  • Author_Institution
    Int. SEMATECH, Austin, TX, USA
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    In this paper, we report on the interactions between HfO/sub 2/ and poly-Si with varying HfO/sub 2/ films. The impact HfO/sub 2/ interaction on important parameters such as gate leakage, yield, flatband voltage and mobility were discussed.
  • Keywords
    MOS capacitors; MOSFET; dielectric thin films; electron mobility; elemental semiconductors; hafnium compounds; silicon; HfO/sub 2/; HfO/sub 2/-Si interaction; MOSFET; Si; electrical properties; electron mobility; flatband voltage; gate leakage; Capacitors; Conferences; Crystallization; Electrodes; Hafnium oxide; MOSFET circuits; Silicon compounds; Transconductance; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159185
  • Filename
    1252510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393669