• DocumentCode
    2393687
  • Title

    Improved performance of FETs with HfAlOx gate dielectrics using optimized poly-SiGe gate electrodes

  • Author

    Muto, Akiyoshi ; Ohji, Hiroshi ; Kawahara, Takaaki ; Maeda, Takeshi ; Torii, Kentaro ; Kitajima, Hiroshi

  • Author_Institution
    Res. Dept. I, Semicond. Leading Edge Technol. Inc, Tsukuba, Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    64
  • Lastpage
    68
  • Abstract
    In this study, we investigated the growth manner of poly-Si/poly-SiGe layered films on HfAlO/sub x/ films with various Hf contents. The effect of the poly-SiGe gate electrode on FET performances was also evaluated.
  • Keywords
    Ge-Si alloys; chemical vapour deposition; elemental semiconductors; field effect transistors; semiconductor growth; semiconductor thin films; silicon; FET; HfAlO/sub x/; HfAlO/sub x/ films; HfAlO/sub x/ gate dielectrics; Si-SiGe; poly-Si-poly-SiGe layered films; poly-SiGe gate electrodes; Annealing; Electrodes; FETs; Germanium silicon alloys; Hafnium; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Silicon germanium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159186
  • Filename
    1252511
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393687