• DocumentCode
    2393704
  • Title

    Self-organized Si suboxide (SiOx, x<2) interfacial layers - optimization of performance and reliability in advanced devices

  • Author

    Lucovsky, G. ; Phillips, J.C.

  • Author_Institution
    Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    70
  • Lastpage
    75
  • Abstract
    Self-organized Si suboxide (SiO/sub x/, x<2) interfacial layers were characterised by medium energy ion scattering, single wavelength ellipsometry, synchrotron X-ray photoelectron spectroscopy and optical second harmonic generation.
  • Keywords
    X-ray photoelectron spectra; dielectric materials; dielectric thin films; ion-surface impact; optical harmonic generation; reliability; silicon compounds; Si-SiO/sub 2/; medium energy ion scattering; optical second harmonic generation; reliability; self-organized Si suboxide interfacial layers; single wavelength ellipsometry; synchrotron X-ray photoelectron spectroscopy; Annealing; Bonding; Dielectric substrates; Dielectric thin films; Ellipsometry; Optical scattering; Spectroscopy; Tensile stress; Thermal stresses; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159187
  • Filename
    1252512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393704