DocumentCode
2393778
Title
Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition
Author
Shimizu, Takashi ; Ishii, Kenichi ; Suzuki, Eiichi
Author_Institution
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
90
Lastpage
93
Abstract
In this work we propose the Ru metal gate for a lanthanide oxide gate insulator and show satisfactory electrical properties of Ru/La oxide stack MOSFETs.
Keywords
MOCVD coatings; MOSFET; lanthanum compounds; ruthenium; thin films; La-oxide gate insulator; MOSFET; Ru gate electrode; Ru-LaO; electrical properties; metalorganic chemical vapor deposition; Chemical vapor deposition; Dielectric substrates; Dielectrics and electrical insulation; Electrodes; High K dielectric materials; High-K gate dielectrics; MOCVD; MOSFET circuits; Metal-insulator structures; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159191
Filename
1252516
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