DocumentCode
2393798
Title
A study on the V/sub th/ shift of HfAlOx MISFETs with n+/p+ poly-Si and TiN gate electrodes fabricated by replacement gate process
Author
Akasaka, Y. ; Miyagawa, K. ; Syoji, H. ; Ogawa, O. ; Kawahara, T. ; Horiuchi, A. ; Mitsuhashi, R. ; Maeda, T. ; Muto, A. ; Kasai, N. ; Yasuhira, M. ; Arikado, T.
Author_Institution
Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
94
Lastpage
95
Abstract
The V/sub th/ shift of a poly-Si/high-k MISFET has been reported. The observed V/sub t/h of p/sup +/ poly-Si/HfAlO/sub x/ or HfSiO/sub x/ is much higher than that of the p/sup +/ poly/SiON MISFET. The controlled V/sub th/ of the PMISFET is strongly required for the application of high-k insulators. In this study, we fabricated HfAlO/sub x/ MISFETs with n/sup +//p/sup +/ poly-Si and TiN gate electrodes by using the same "replacement gate" process. We found that the difference of V/sub fb/ between n/sup +/ poly-Si-/HfAlOx and p/sup +/ poly-Si/HfAlO/sub x/ systems is independent of channel types and much smaller than 1 V i.e. the theoretical difference between the work function of n/sup +/ and p/sup +/ Si. On the other hand, the TiN/HfAlO/sub x/ system shows the appropriate V/sub fb/ expected from work function.
Keywords
MISFET; chemical vapour deposition; dielectric thin films; elemental semiconductors; hafnium compounds; silicon; titanium compounds; work function; HfAlO/sub x/ MISFET; PMISFET; Si-HfAlO; TiN gate electrodes; TiN-HfAlO; replacement gate process; work function; Boron; Capacitors; Channel bank filters; Electrodes; High K dielectric materials; High-K gate dielectrics; Insulation; Leakage current; MISFETs; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159192
Filename
1252517
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