Title :
Energy barrier heights of ultra-thin silicon dioxide films with different metal gates
Author :
Yoshii, Naoto ; Morita, Satoru ; Shinozaki, Akihito ; Aoki, Minoru ; Morita, Mizuho
Author_Institution :
Dept. of Precision Sci. & Technol., Osaka Univ., Suita, Japan
Abstract :
In this study, we have examined a way to determine the barrier height of ultra-thin SiO/sub 2/ films by current density-oxide voltage characteristics of MOS diode using different metal gates.
Keywords :
MIS devices; semiconductor diodes; silicon compounds; thin films; MOS diode; SiO/sub 2/; current density-oxide voltage properties; energy barrier heights; metal gates; ultra-thin silicon dioxide films; Diodes; Effective mass; Electrons; Energy barrier; Gold; Oxidation; Power engineering and energy; Semiconductor films; Silicon compounds; Voltage;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159193
