Title :
Atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides
Author_Institution :
Dept. of Chem., Helsinki Univ., Finland
Abstract :
In this paper, atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides HfO/sub 2/ and ZrO/sub 2/ thin films were studied.
Keywords :
atomic layer deposition; dielectric materials; dielectric thin films; hafnium compounds; permittivity; zirconium compounds; HfO/sub 2/; HfO/sub 2/ thin films; ZrO/sub 2/; ZrO/sub 2/ thin films; atomic layer deposition chemistry; high permittivity dielectric oxides; physical properties; Atomic layer deposition; Bonding; Chemicals; Chemistry; Dielectric thin films; Etching; Inductors; Mechanical factors; Permittivity; Temperature distribution;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159195
