DocumentCode
2393885
Title
Atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides
Author
Kukli, Kaupo
Author_Institution
Dept. of Chem., Helsinki Univ., Finland
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
106
Lastpage
111
Abstract
In this paper, atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides HfO/sub 2/ and ZrO/sub 2/ thin films were studied.
Keywords
atomic layer deposition; dielectric materials; dielectric thin films; hafnium compounds; permittivity; zirconium compounds; HfO/sub 2/; HfO/sub 2/ thin films; ZrO/sub 2/; ZrO/sub 2/ thin films; atomic layer deposition chemistry; high permittivity dielectric oxides; physical properties; Atomic layer deposition; Bonding; Chemicals; Chemistry; Dielectric thin films; Etching; Inductors; Mechanical factors; Permittivity; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159195
Filename
1252520
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