Title :
Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides
Author :
Lucovsky, G. ; Zhang, Yu ; Whitten, J.L. ; Scholm, D.G. ; Freeouf, J.L.
Author_Institution :
Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA
Abstract :
This paper introduced a new class of complex rare earth/transition metal oxides in which the energies of the lowest conduction band states can be controlled through bonding of the constituent Re and Tm atoms to a common oxygen atom. The electronic structure of GdScO/sub 3/, the electronic band edge structure of Sc/sub 2/O/sub 3/, and an ab initio theory were studied.
Keywords :
ab initio calculations; conduction bands; dielectric materials; gadolinium compounds; hafnium compounds; permittivity; scandium compounds; zirconium compounds; GdScO/sub 3/; HfO/sub 2/; Sc/sub 2/O/sub 3/; ZrO/sub 2/; ab initio calculations; complex rare-earth-transition metal oxides; conduction band states; dielectric constants; electronic band edge structure; electronic structure; interfacial band alignments; oxygen atom; Bonding; Capacitive sensors; Chemistry; Dielectric constant; Dielectric devices; Dielectric thin films; Electrodes; High-K gate dielectrics; Silicon alloys; Spectroscopy;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159196
