DocumentCode
2393979
Title
HfSiON gate dielectric for CMOS applications
Author
Takayanagi, M. ; Watanabe, T. ; Iijima, R. ; Kaneko, A. ; Inumiya, S. ; Hirano, I. ; Sekine, K. ; Nishiyama, A. ; Eguchi, K. ; Tsunashima, Y.
Author_Institution
SoC R&D Center, Yokohama, Japan
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
128
Lastpage
132
Abstract
In this paper, we review our results on HfSiON deposited by MOCVD. Characteristics of capacitors and FETs fabricated by the conventional poly-Si gate CMOS process are discussed. We cover the issues of flatband voltage shift, effective inversion-layer mobility in relation to fabrication method of HfSiON, design consideration of HfSiON for 50 nm CMOSFETs and dielectric reliability.
Keywords
CMOS integrated circuits; MOCVD coatings; MOS capacitors; MOSFET; dielectric thin films; hafnium compounds; inversion layers; silicon compounds; CMOSFET; FET; HfSiON; HfSiON gate dielectrics; MOCVD; capacitors; dielectric reliability; effective inversion-layer mobility; flatband voltage shift; poly-Si gate CMOS process; CMOS process; CMOSFETs; Capacitors; Degradation; High K dielectric materials; High-K gate dielectrics; MOCVD; Robust stability; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159199
Filename
1252524
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