Title :
Extending the life of N/O stack gate dielectric with gate electrode engineering
Author :
Xiang, Qi ; Krivokapic, Zoran ; Maszara, Witek ; Lin, Ming-Ren
Author_Institution :
Technol. Dev. Group, Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
Nitride/oxynitride (N/O) stack gate dielectrics show significant leakage reduction and strong boron penetration resistance as compared to oxynitrides. The life of the N/O stack can be further extended by gate electrode engineering. With pre-doped poly-Si gates for both N- and P-MOS devices, poly-Si gate depletion can be minimized and inversion Tox can be reduced. Employment of NiSi can further reduce inversion Tox by minimizing gate dopant deactivation. In addition, a fully-silicided (FUSI) NiSi metal gate electrode totally eliminates poly-Si gate depletion and reduces the inversion Tox by 4-6A. Both FDSOI devices and strained Si devices with N/O stack and FUSI metal gate showed performance improvements and no degradation in gate dielectric reliability.
Keywords :
MOS capacitors; MOSFET; dielectric thin films; elemental semiconductors; nickel alloys; silicon; silicon alloys; NMOS devices; NiSi; NiSi metal gate electrode; PMOS devices; Si; boron penetration resistance; gate dielectric reliability; gate dopant deactivation; gate electrode engineering; leakage reduction; nitride-oxynitride stack gate dielectrics; poly Si gate depletion; strained Si devices; Boron; Degradation; Dielectric devices; Electrodes; Employment; Gate leakage; Nitrogen; Stress; Temperature; Voltage;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159200
