• DocumentCode
    2394054
  • Title

    Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks

  • Author

    Mitsuhashi, Riichirou ; Horiuchi, Atsushi ; Uedono, Akira ; Torii, Kentaro

  • Author_Institution
    Semicond. Leading Edge Technol., Tsukuba, Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    150
  • Lastpage
    154
  • Abstract
    In this paper we investigate the influence of O/sub 2/ partial pressure on the IL thickness during post high-k deposition annealing. The effect of high temperature annealing after IL formation on the oxidation resistance of the IL is also reported.
  • Keywords
    MOSFET; annealing; elemental semiconductors; hafnium compounds; high-temperature effects; interface structure; oxidation; silicon; thermal stability; thin films; Si-HfAlO/sub x/; annealing; gate stacks; high-temperature effects; interfacial layer; oxidation resistance; thermal stability; CMOS process; Capacitors; High K dielectric materials; High-K gate dielectrics; Lead compounds; Leakage current; Oxidation; Rapid thermal annealing; Temperature; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159203
  • Filename
    1252528
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2394054