Title :
In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system
Author :
Aoyama, Tomonori ; Kamiyama, Satoshi ; Tamura, Yasuyuki ; Sasaki, Takaoki ; Mitsuhashi, Riichirou ; Torii, Kazuyoshi ; Kitajima, Hiroshi ; Arikado, Tsunetoshi
Author_Institution :
Res. Dept. I, Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
Abstract :
In this paper, we propose the novel HfSiON fabrication process using hot wall batch system, metal organic chemical vapor deposition and post deposition annealing. Properties of FETs with the HfSiON gate dielectric formed by these novel processes are also reported.
Keywords :
MOCVD; annealing; dielectric materials; dielectric thin films; field effect transistors; hafnium compounds; silicon compounds; FET; HfSiON-SiO/sub 2/; hot wall batch system; in situ HfSiON/SiO/sub 2/ gate dielectric fabrication; metal organic chemical vapor deposition; post deposition annealing; Annealing; Dielectric substrates; FETs; Fabrication; Fluid flow; Hafnium; Hydrogen; MOCVD; Nitrogen; Temperature;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159207
