Title :
Effects of nitrogen incorporation HfAlOx films on gate leakage current from XPS study of Hf bonding states
Author :
Nishimura, T. ; Iwamoto, K. ; Tominaga, K. ; Yasuda, T. ; Mizubayashi, W. ; Fujii, S. ; Nabatame, T. ; Toriumi, A.
Author_Institution :
Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci & Technol., Tsukuba, Japan
Abstract :
In this paper, we focus on the impact of N incorporation on the gate leakage current and the modification of the bonding configuration of HfAlO/sub x/(N) network.
Keywords :
MOS capacitors; MOSFET; X-ray photoelectron spectra; aluminium compounds; dielectric materials; dielectric thin films; elemental semiconductors; hafnium compounds; leakage currents; silicon; Hf bonding states; HfAlO/sub x/N-Si; XPS; gate leakage current; nitrogen incorporation; nitrogen incorporation HfAlO/sub x/ films; Amorphous materials; Annealing; Bonding; Crystallization; Hafnium; High K dielectric materials; High-K gate dielectrics; Leakage current; Materials science and technology; Nitrogen;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159208
